Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis (2019)

First Author: Renz A
Attributed to:  Underpinning Power Electronics 2012: Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.963.511

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.963.511

Type: Journal Article/Review

Parent Publication: Materials Science Forum