The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors (2021)

First Author: Simatos D

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0044785

Publication URI: http://dx.doi.org/10.1063/5.0044785

Type: Journal Article/Review

Parent Publication: APL Materials

Issue: 4