An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers (2020)

First Author: Naydenov K
Attributed to:  Power Semiconductor Devices for Smart Grid Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0002838

Publication URI: http://dx.doi.org/10.1063/5.0002838

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 19