Carrier Recombination Properties of Low-Threshold 1.3 µm Quantum Dot Lasers on Silicon (2022)
Attributed to:
Strained germanium photonic crystal membranes for scalable and efficient silicon-based photonic devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2021.3101293
Publication URI: http://dx.doi.org/10.1109/jstqe.2021.3101293
Type: Journal Article/Review
Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics
Issue: 1: Semiconductor Lasers