Defect structures in (001) zincblende GaN/3C-SiC nucleation layers (2021)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0036366
Publication URI: http://dx.doi.org/10.1063/5.0036366
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 15