A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO2/Ge and Si-cap/Ge Gate Stack (2021)
Attributed to:
Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2021.3078540
Publication URI: http://dx.doi.org/10.1109/jeds.2021.3078540
Type: Journal Article/Review
Parent Publication: IEEE Journal of the Electron Devices Society