Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD (2011)

First Author: Myronov M

Attributed to: UK Silicon Photonics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.133

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.133

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 1