Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD (2011)
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.133
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.133
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 1