Correlation between deep-level defects and functional properties of ß-(Sn x Ga1- x )2O3 on Si photodetectors (2021)

First Author: Hatipoglu I
Attributed to:  Quantitative non-destructive nanoscale characterisation of advanced materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0068186

Publication URI: http://dx.doi.org/10.1063/5.0068186

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 20