Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1-xN nucleation layers (2022)
Attributed to:
Fast Switching Zincblende GaN LEDs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0077186
Publication URI: http://dx.doi.org/10.1063/5.0077186
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 11