High synergy atomic layer etching of AlGaN/GaN with HBr and Ar (2022)
Attributed to:
Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/6.0001862
Publication URI: http://dx.doi.org/10.1116/6.0001862
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology A
Issue: 4