Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts (2022)

First Author: Naydenov K
Attributed to:  Power Semiconductor Devices for Smart Grid Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-s1v84y

Publication URI: http://dx.doi.org/10.4028/p-s1v84y

Type: Journal Article/Review

Parent Publication: Materials Science Forum