On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts (2022)

First Author: Donato N

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-fnekfr

Publication URI: http://dx.doi.org/10.4028/p-fnekfr

Type: Journal Article/Review

Parent Publication: Materials Science Forum