Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy (2023)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0138478
Publication URI: http://dx.doi.org/10.1063/5.0138478
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 10