Inherent electron and hole trapping in amorphous phase-change memory materials: Ge 2 Sb 2 Te 5 (2022)

First Author: Konstantinou K
Attributed to:  HIGH END COMPUTING MATERIALS CHEMISTRY CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/d2tc00486k

Publication URI: http://dx.doi.org/10.1039/d2tc00486k

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 17