Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)

First Author: Xuyang Lu
Attributed to:  Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe) funded by EPSRC

Abstract

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Bibliographic Information

Publication URI: https://ieeexplore.ieee.org/abstract/document/9907581

Type: Conference/Paper/Proceeding/Abstract