Strain-balanced GaAs 1-x Bi x /GaN y As 1-y W-type quantum wells for GaAs-based 1.3-1.6 µm lasers (2021)
Attributed to:
Strained germanium photonic crystal membranes for scalable and efficient silicon-based photonic devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/nusod52207.2021.9541434
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85116328265
Type: Conference/Paper/Proceeding/Abstract