Carrier Recombination Processes in 2.3-µm Epitaxially Grown Mid-Infrared Laser Diodes on Si(001) (2021)
Attributed to:
Strained germanium photonic crystal membranes for scalable and efficient silicon-based photonic devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/islc51662.2021.9615906
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85122899349
Type: Conference/Paper/Proceeding/Abstract