Injection- and Temperature-Dependence of Type-II 1.2-1.3 µm (GaIn)As/Ga(AsSb) "W"-Lasers (2021)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/islc51662.2021.9615869
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85122870623
Type: Conference/Paper/Proceeding/Abstract