Type-II GaAs 1-x Bi x /GaN y As 1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers (2021)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/islc51662.2021.9615882
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85122868727
Type: Conference/Paper/Proceeding/Abstract