Modelling of the Gate Capacitance in the Double Nanowire based Field-Effect Transistors (2021)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/fleps51544.2021.9469836

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85114124242

Type: Conference/Paper/Proceeding/Abstract