Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator (2023)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.3c00633

Publication URI: http://dx.doi.org/10.1021/acs.cgd.3c00633

Type: Journal Article/Review

Parent Publication: Crystal Growth & Design

Issue: 11