Modelling SiC MOSFET module threshold voltage (V) and impact of parallel device ?V on short circuit robustness (2023)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2023.115101
Publication URI: http://dx.doi.org/10.1016/j.microrel.2023.115101
Type: Journal Article/Review
Parent Publication: Microelectronics Reliability