Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer (2017)

First Author: Kumar S

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2757516

Publication URI: http://dx.doi.org/10.1109/ted.2017.2757516

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 12