Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy (2023)
Attributed to:
Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.3c00172
Publication URI: http://dx.doi.org/10.1021/acs.cgd.3c00172
Type: Journal Article/Review
Parent Publication: Crystal Growth & Design
Issue: 6