Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction (2020)
Attributed to:
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s43246-020-0021-6
Publication URI: http://dx.doi.org/10.1038/s43246-020-0021-6
Type: Journal Article/Review
Parent Publication: Communications Materials
Issue: 1