MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1) (2023)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2023.127182
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2023.127182
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
ISSN: 0022-0248