Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing (2022)
Attributed to:
Ferroelectric gating for agile and reconfigurable 2D electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsnano.2c00079
Publication URI: http://dx.doi.org/10.1021/acsnano.2c00079
Type: Journal Article/Review
Parent Publication: ACS Nano
Issue: 2
ISSN: 1936-0851