a-Ga2O3 grown by low temperature atomic layer deposition on sapphire (2018)

First Author: Roberts J

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2018.02.014

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2018.02.014

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

ISSN: 0022-0248