GaN Transistors' Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration (2024)

First Author: Marsic V
Attributed to:  Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/access.2024.3357239

Publication URI: http://dx.doi.org/10.1109/access.2024.3357239

Type: Journal Article/Review

Parent Publication: IEEE Access