Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours (2023)

First Author: Lu X
Attributed to:  Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.23919/epe23ecceeurope58414.2023.10264283

Publication URI: http://dx.doi.org/10.23919/epe23ecceeurope58414.2023.10264283

Type: Conference/Paper/Proceeding/Abstract