Physical simulation of dynamic resistive switching in metal oxides using a Schottky contact barrier model (2015)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/sispad.2015.7292318
Publication URI: http://dx.doi.org/10.1109/sispad.2015.7292318
Type: Conference/Paper/Proceeding/Abstract