Characterization of BTI in SiC MOSFETs Using Third Quadrant Characteristics (2019)
Attributed to:
High Current Module and Technologies Optimised for HVDC
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2019.8757624
Publication URI: http://dx.doi.org/10.1109/ispsd.2019.8757624
Type: Conference/Paper/Proceeding/Abstract
ISSN: 10636854