Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures (2023)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2023.127420
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2023.127420
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth