Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant (2015)

First Author: Zaidi Z

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.13216

Publication URI: https://www.repository.cam.ac.uk/handle/1810/267203

Type: Journal Article/Review