AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels (2016)

First Author: Guo Y
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.278

Publication URI: https://www.repository.cam.ac.uk/handle/1810/256335

Type: Journal Article/Review