AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels (2016)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.139
Publication URI: https://www.repository.cam.ac.uk/handle/1810/256197
Type: Other