AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels (2016)

First Author: Guo Y

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.139

Publication URI: https://www.repository.cam.ac.uk/handle/1810/256197

Type: Other