Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design (2016)
Attributed to:
Transition-edge sensors: achieving true potential
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1604.04168
Publication URI: https://arxiv.org/abs/1604.04168
Type: Other