Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode (2018)

First Author: Pathirana V

Attributed to: Underpinning Power Electronics 2012: Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.22491

Publication URI: https://www.repository.cam.ac.uk/handle/1810/278702

Type: Journal Article/Review