Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)
Attributed to:
Strain-engineered graphene: growth, modification and electronic properties
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2107.07950
Publication URI: https://arxiv.org/abs/2107.07950
Type: Other