Performance characteristics of low threshold current 1.25-µm type-II GaInAs/GaAsSb W-lasers for optical communications (2020)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2011.14418
Publication URI: https://arxiv.org/abs/2011.14418
Type: Other