Transition metal nitride thin films deposited at CMOS compatible temperatures for tunable optoelectronic and plasmonic devices (2020)
Attributed to:
REACTIVE PLASMONICS: OPTICAL CONTROL OF ELECTRONIC PROCESSES AT INTERFACES FOR NANOSCALE PHYSICS, CHEMISTRY AND METROLOGY
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2005.05185
Publication URI: https://arxiv.org/abs/2005.05185
Type: Preprint