Influence of AlxGa1-xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) (2022)

First Author: Gundimeda A
Attributed to:  EPSRC Manufacturing Fellowship in Gallium Nitride funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.80308

Publication URI: https://www.repository.cam.ac.uk/handle/1810/332878

Type: Journal Article/Review