Low temperature growth and optical properties of a-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition (2019)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.44358
Publication URI: https://www.repository.cam.ac.uk/handle/1810/297309
Type: Journal Article/Review