Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates (2019)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.42967
Publication URI: https://www.repository.cam.ac.uk/handle/1810/295921
Type: Journal Article/Review