Nature of Cu Interstitials in Al2O3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices (2016)
Attributed to:
Mechanisms and Control of Resistive Switching in Dielectrics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.6593
Publication URI: https://www.repository.cam.ac.uk/handle/1810/261409
Type: Journal Article/Review