Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence (2016)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.7753
Publication URI: https://www.repository.cam.ac.uk/handle/1810/262491
Type: Journal Article/Review