AlN-GeO<inf>2</inf> based gate stack for improved reliability of Ge MOSFETs (2015)

First Author: Li H
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.40582

Publication URI: https://www.repository.cam.ac.uk/handle/1810/293430

Type: Journal Article/Review