Modelling and enhancement of the channel mobility of 4H-SiC power MOS devices (2022)

First Author: Naydenov K

Attributed to: Power Semiconductor Devices for Smart Grid Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.94657

Publication URI: https://www.repository.cam.ac.uk/handle/1810/347241

Type: Thesis